Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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5
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Physical Review B, Volume 86, issue 6, pp. 1-5
Abstract
Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.Description
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Korhonen, E, Kuitunen, K, Tuomisto, F, Urbaniak, A, Igalson, M, Larsen, J, Gütay, L & Siebentritt, S 2012, 'Vacancy defects in epitaxial thin film CuGaSe 2 and CuInSe 2', Physical Review B, vol. 86, no. 6, 064102, pp. 1-5. https://doi.org/10.1103/PhysRevB.86.064102