Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2
Loading...
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Date
2012-08
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
5
1-5
1-5
Series
PHYSICAL REVIEW B, Volume 86, issue 6
Abstract
Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.Description
Keywords
CGS, CIGS, CIS, positron
Other note
Citation
Korhonen , E , Kuitunen , K , Tuomisto , F , Urbaniak , A , Igalson , M , Larsen , J , Gütay , L & Siebentritt , S 2012 , ' Vacancy defects in epitaxial thin film CuGaSe 2 and CuInSe 2 ' , Physical Review B , vol. 86 , no. 6 , 064102 , pp. 1-5 . https://doi.org/10.1103/PhysRevB.86.064102