Physical mechanisms of boron diffusion gettering of iron in silicon

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2010
Major/Subject
Mcode
Degree programme
Language
en
Pages
136-138
Series
Physica Status Solidi (RRL), Volume 4, Issue 5-6
Abstract
We have studied the boron diffusion gettering (BDG) of iron in single crystalline silicon. The results show that iron is gettered efficiently by electrically inactive boron, which leads to gettering efficiencies comparable to phosphorus diffusion gettering (PDG). In addition we discuss the different physical mechanisms behind BDG. We also consider the possibilities of using boron diffusion gettering in solar cell fabrication and discuss the role of boron and iron concentration in the optimization of gettering efficiency.
Description
Keywords
boron diffusion gettering, B−Si precipitates, iron, silicon solar cells
Other note
Citation
Vähänissi, V. & Haarahiltunen, A. & Talvitie, H. & Yli-Koski, M. & Lindroos, J. & Savin, Hele. 2010. Physical mechanisms of boron diffusion gettering of iron in silicon. Physica Status Solidi (RRL). Volume 4, Issue 5-6. 136-138. DOI: 10.1002/pssr.201004105.