Si nanoparticle interfaces in Si/SiO2 solar cell materials
Loading...
Access rights
© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 114, Issue 16 and may be found at http://scitation.aip.org/content/aip/journal/jap/114/16/10.1063/1.4824826.
Final published version
URL
Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
2013
Major/Subject
Mcode
Degree programme
Language
en
Pages
164316/1-4
Series
Journal of Applied Physics, Volume 114, Issue 16
Abstract
Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.Description
Keywords
solar cells, silicon, silicon dioxide, nanoparticles, positrons
Other note
Citation
Kilpeläinen, S. & Kujala, J. & Tuomisto, Filip & Slotte, J. & Lu, Y.-W. & Nylandsted Larsen, A. 2013. Si nanoparticle interfaces in Si/SiO2 solar cell materials. Journal of Applied Physics. Volume 114, Issue 16. 164316/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.4824826