Thermal shot noise in top-gated single carbon nanotube field effect transistors

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorChaste, J.
dc.contributor.authorPallecchi, E.
dc.contributor.authorMorfin, P.
dc.contributor.authorFeve, G.
dc.contributor.authorKontos, T.
dc.contributor.authorBerroir, J.-M.
dc.contributor.authorHakonen, Pertti J.
dc.contributor.authorPlacais, B.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-25T09:01:39Z
dc.date.available2015-09-25T09:01:39Z
dc.date.issued2010
dc.description.abstractThe high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson–Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of 13 μe/√Hz in the 0.2–0.8 GHz band.en
dc.description.versionPeer revieweden
dc.format.extent192103/1-3
dc.format.mimetypeapplication/pdfen
dc.identifier.citationChaste, J. & Pallecchi, E. & Morfin, P. & Feve, G. & Kontos, T. & Berroir, J.-M. & Hakonen, Pertti J. & Placais, B. 2010. Thermal shot noise in top-gated single carbon nanotube field effect transistors. Applied Physics Letters. Volume 96, Issue 19. 192103/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3425889en
dc.identifier.doi10.1063/1.3425889
dc.identifier.issn0003-6951 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17878
dc.identifier.urnURN:NBN:fi:aalto-201509254472
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 96, Issue 19
dc.rights© 2010 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 96, Issue 19 and may be found at http://scitation.aip.org/content/aip/journal/apl/96/19/10.1063/1.3425889.en
dc.rights.holderAIP Publishing
dc.subject.keywordshot noiseen
dc.subject.keywordcarbon nanotubesen
dc.subject.otherPhysicsen
dc.titleThermal shot noise in top-gated single carbon nanotube field effect transistorsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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