Thermal shot noise in top-gated single carbon nanotube field effect transistors
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© 2010 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 96, Issue 19 and may be found at http://scitation.aip.org/content/aip/journal/apl/96/19/10.1063/1.3425889.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2010
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Degree programme
Language
en
Pages
192103/1-3
Series
Applied Physics Letters, Volume 96, Issue 19
Abstract
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson–Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of 13 μe/√Hz in the 0.2–0.8 GHz band.Description
Keywords
shot noise, carbon nanotubes
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Citation
Chaste, J. & Pallecchi, E. & Morfin, P. & Feve, G. & Kontos, T. & Berroir, J.-M. & Hakonen, Pertti J. & Placais, B. 2010. Thermal shot noise in top-gated single carbon nanotube field effect transistors. Applied Physics Letters. Volume 96, Issue 19. 192103/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3425889