Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
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© 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1997
Major/Subject
Mcode
Degree programme
Language
en
Pages
2828-2830
Series
Applied Physics Letters, Volume 70, Issue 21
Abstract
A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.Description
Keywords
quantum wires, focused ion beam technology, luminescence, polarization, InGaAs
Other note
Citation
Ahopelto, J. & Sopanen, M. & Lipsanen, Harri & Lourdudoss, S. & Rodriguez Messmer, E. & Höfling, E. & Reithmaier, J. P. & Forchel, A. & Petersson, A. & Samuelson, L. 1997. Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs. Applied Physics Letters. Volume 70, Issue 21. P. 2828-2830. ISSN 0003-6951 (printed). DOI: 10.1063/1.119015.