Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
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© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 86, Issue 4 and may be found at http://scitation.aip.org/content/aip/journal/apl/86/4/10.1063/1.1855412.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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042103/1-3
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Applied Physics Letters, Volume 86, Issue 4
Abstract
Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.Description
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Zubiaga, A. & Tuomisto, Filip & Plazaola, F. & Saarinen, K. & Garcia, J. A. & Rommeluere, J. F. & Zuniga-Perez, J. & Munoz-Sanjose, V. 2005. Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness. Applied Physics Letters. Volume 86, Issue 4. 042103/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.1855412