Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

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A4 Artikkeli konferenssijulkaisussa

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2022

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en

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6

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ASDAM 2022 - Proceedings, Conference proceedings (International conference on advanced semiconductor devices and microsystems)

Abstract

Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.

Description

Funding Information: This work has been funded by iRel40. iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under grant agreement No 876659. The funding of the project comes from the Horizon 2020 research programme and participating countries. National funding is provided by Germany, Austria, Belgium, Finland (Innovation Funding Agency, Business Finland), France, Italy, the Netherlands, Slovakia, Spain, Sweden, and Turkey. Publisher Copyright: © 2022 IEEE. | openaire: EC/HE/876659/EU//iRel40

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Emadi, F, Liu, S, Klami, A, Tiwary, N, Vuorinen, V & Paulasto-Krockel, M 2022, Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding . in J Marek, D Donoval & E Vavrinsky (eds), ASDAM 2022 - Proceedings : 14th International Conference on Advanced Semiconductor Devices and Microsystems . Conference proceedings (International conference on advanced semiconductor devices and microsystems), IEEE, International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 23/10/2022 . https://doi.org/10.1109/ASDAM55965.2022.9966765