Temperature dependence of carrier relaxation in strain-induced quantum dots

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorBrasken, M.
dc.contributor.authorLindberg, M.
dc.contributor.authorSopanen, M.
dc.contributor.authorLipsanen, H.
dc.contributor.authorTulkki, J.
dc.contributor.departmentDepartment of Micro and Nanosciences
dc.contributor.departmentDepartment of Neuroscience and Biomedical Engineering
dc.date.accessioned2018-05-22T14:30:22Z
dc.date.available2018-05-22T14:30:22Z
dc.date.issued1998-12-15
dc.description.abstractWe report experimental observation and theoretical interpretation of temperature-dependent, time-resolved luminescence from strain-induced quantum dots. The experimental results are well described by a master equation model for the electrons. The intraband relaxation in the conduction band and the radiative recombination rate are governed by the hole populations resulting in prominent temperature dependence of the relaxation process. Even when only a few electrons and holes are confined in a single quantum dot the Auger-like process provides a rapid intraband relaxation channel for electrons that can replace the phonon scattering as the dominant relaxation mechanism.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.extentR15993-R15996
dc.format.mimetypeapplication/pdf
dc.identifier.citationBrasken , M , Lindberg , M , Sopanen , M , Lipsanen , H & Tulkki , J 1998 , ' Temperature dependence of carrier relaxation in strain-induced quantum dots ' , Physical Review B , vol. 58 , no. 24 , pp. R15993-R15996 . https://doi.org/10.1103/physrevb.58.r15993en
dc.identifier.doi10.1103/physrevb.58.r15993
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.otherPURE UUID: 1de1e126-aa3c-4a80-854b-502c580385d1
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/1de1e126-aa3c-4a80-854b-502c580385d1
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/14806437/PhysRevB.58.R15993.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/30786
dc.identifier.urnURN:NBN:fi:aalto-201805222226
dc.language.isoenen
dc.relation.ispartofseriesPHYSICAL REVIEW Ben
dc.relation.ispartofseriesVolume 58, issue 24en
dc.rightsopenAccessen
dc.subject.keywordcarrier relaxation
dc.subject.keywordquantum dots
dc.titleTemperature dependence of carrier relaxation in strain-induced quantum dotsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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