Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiode

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorChen, Kexun
dc.contributor.authorSetälä, Olli
dc.contributor.authorLiu, Xiaolong
dc.contributor.authorRadfar, Behrad
dc.contributor.authorPasanen, Toni
dc.contributor.authorSerue, Michael
dc.contributor.authorHeinonen, Juha
dc.contributor.authorSavin, Hele
dc.contributor.authorVähänissi, Ville
dc.contributor.departmentHele Savin Group
dc.contributor.departmentDepartment of Electronics and Nanoengineering
dc.contributor.departmentElFys Inc.
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.date.accessioned2023-04-26T08:39:22Z
dc.date.available2023-04-26T08:39:22Z
dc.date.issued2023-04-01
dc.description.abstractMetal-assisted chemical etched (MACE; also known as MacEtch or MCCE) nanostructures are utilized widely in the solar cell industry due to their excellent optical properties combined with a simple and cost-efficient fabrication process. The photodetection community, on the other hand, has not shown much interest toward MACE due to its drawbacks, including insufficient surface passivation, increased junction recombination, and possible metal contamination, which are especially detrimental to p-n photodiodes. Here, we aim to change this by demonstrating how to fabricate high-performance MACE p-n photodiodes with above 90% external quantum efficiency (EQE) without external bias voltage at 200-1000 nm and dark current less than 3 nA/cm2 at -5 V using industrially applicable methods. The key is to utilize an induced junction created by an atomic layer deposited (ALD) highly charged Al2O3 thin film that simultaneously provides efficient field-effect passivation and full conformality over the MACE nanostructures. Achieving close to ideal performance demonstrates the vast potential of MACE nanostructures in the fabrication of high-performance low-cost p-n photodiodes.en
dc.description.versionPeer revieweden
dc.format.extent7
dc.format.extent6750-6756
dc.format.mimetypeapplication/pdf
dc.identifier.citationChen , K , Setälä , O , Liu , X , Radfar , B , Pasanen , T , Serue , M , Heinonen , J , Savin , H & Vähänissi , V 2023 , ' Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiode ' , IEEE Sensors Journal , vol. 23 , no. 7 , pp. 6750-6756 . https://doi.org/10.1109/JSEN.2023.3246505en
dc.identifier.doi10.1109/JSEN.2023.3246505
dc.identifier.issn1530-437X
dc.identifier.issn1558-1748
dc.identifier.otherPURE UUID: 4beac7c8-a3cc-4a79-9002-9f339626b8e3
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/4beac7c8-a3cc-4a79-9002-9f339626b8e3
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85149387994&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/106211486/Excellent_Responsivity_and_Low_Dark_Current_Obtained_With_Metal_Assisted_Chemical_Etched_Si_Photodiode.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/120521
dc.identifier.urnURN:NBN:fi:aalto-202304262843
dc.language.isoenen
dc.publisherIEEE
dc.relation.ispartofseriesIEEE Sensors Journalen
dc.relation.ispartofseriesVolume 23, issue 7en
dc.rightsopenAccessen
dc.subject.keywordMACE
dc.subject.keywordphotodetector
dc.subject.keywordresponsivity
dc.subject.keywordSi
dc.titleExcellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodeen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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