In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSlotte, Jonatan
dc.contributor.authorKilpeläinen, Simo
dc.contributor.authorSegercrantz, Natalie
dc.contributor.authorMizohata, Kenichiro
dc.contributor.authorRäisänen, Jyrki
dc.contributor.authorTuomisto, Filip
dc.contributor.departmentAntimatter and Nuclear Engineering
dc.contributor.departmentDepartment of Applied Physics
dc.contributor.departmentUniversity of Helsinki
dc.date.accessioned2021-03-03T07:36:29Z
dc.date.available2021-03-03T07:36:29Z
dc.date.issued2021-01
dc.description.abstractA unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10–300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues.en
dc.description.versionPeer revieweden
dc.format.extent6
dc.format.mimetypeapplication/pdf
dc.identifier.citationSlotte , J , Kilpeläinen , S , Segercrantz , N , Mizohata , K , Räisänen , J & Tuomisto , F 2021 , ' In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities ' , Physica Status Solidi (A) Applications and Materials Science , vol. 218 , no. 1 , 2000232 . https://doi.org/10.1002/pssa.202000232en
dc.identifier.doi10.1002/pssa.202000232
dc.identifier.issn1862-6300
dc.identifier.issn1862-6319
dc.identifier.otherPURE UUID: 7945676c-ca9c-447c-9a70-688aa81eb334
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/7945676c-ca9c-447c-9a70-688aa81eb334
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85088825186&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/56595414/pssa.202000232.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/102910
dc.identifier.urnURN:NBN:fi:aalto-202103032198
dc.language.isoenen
dc.publisherWILEY-V C H VERLAG GMBH
dc.relation.ispartofseriesPhysica Status Solidi (A) Applications and Materials Scienceen
dc.relation.ispartofseriesVolume 218, issue 1en
dc.rightsopenAccessen
dc.subject.keyworddefects
dc.subject.keywordirradiation
dc.subject.keywordpositron annihilation spectroscopy
dc.subject.keywordvacancies
dc.titleIn Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilitiesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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