In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2021-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
Series
Physica Status Solidi (A) Applications and Materials Science, Volume 218, issue 1
Abstract
A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10–300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues.
Description
Keywords
defects, irradiation, positron annihilation spectroscopy, vacancies
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Citation
Slotte , J , Kilpeläinen , S , Segercrantz , N , Mizohata , K , Räisänen , J & Tuomisto , F 2021 , ' In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities ' , Physica Status Solidi (A) Applications and Materials Science , vol. 218 , no. 1 , 2000232 . https://doi.org/10.1002/pssa.202000232