Low-temperature atomic layer deposition of crystalline manganese oxide thin films
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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5
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Dalton Transactions, Volume 45, issue 46, pp. 18737-18741
Abstract
We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10 and ozone as precursors to fabricate crystalline α-Mn2O3 and Mn3O4 thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60-100 °C and the latter in the range 120-160 °C. In both cases an appreciably high growth rate of ∼1.2 Å per cycle is achieved. The spinel-structured Mn3O4 thin films are shown to be ferrimagnetic with the transition temperature determined to be at ∼47 K.Description
| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
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Jin, H, Hagen, D & Karppinen, M 2016, 'Low-temperature atomic layer deposition of crystalline manganese oxide thin films', Dalton Transactions, vol. 45, no. 46, pp. 18737-18741. https://doi.org/10.1039/c6dt03040h