Low energy electron beam induced vacancy activation in GaN
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Applied Physics Letters, Volume 100, issue 12, pp. 1-3
Abstract
Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-Hn complexes that can be activated by H removal during low energy electron irradiation.Description
Keywords
electron beam effects, gallium compounds, III-V semiconductors, MOCVD, photoluminescence, positron annihilation, scanning electron microscopy, semiconductor epitaxial layers, semiconductor growth, vacancies (crystal), vapour phase epitaxial growth, wide, electron beam effects, gallium compounds, III-V semiconductors, MOCVD, photoluminescence, positron annihilation, scanning electron microscopy, semiconductor epitaxial layers, semiconductor growth, vacancies (crystal), vapour phase epitaxial growth
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Citation
Nykänen, H, Suihkonen, S, Kilanski, L, Sopanen, M & Tuomisto, F 2012, 'Low energy electron beam induced vacancy activation in GaN', Applied Physics Letters, vol. 100, no. 12, 122105, pp. 1-3. https://doi.org/10.1063/1.3696047