Nitrogen-impurity–native-defect complexes in ZnSe
Loading...
Access rights
© 1998 American Physical Society (APS). This is the accepted version of the following article: Pöykkö, S. & Puska, M. J. & Nieminen, Risto M. 1998. Nitrogen-impurity–native-defect complexes in ZnSe. Physical Review B. Volume 57, Issue 19. 12174-12180. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.57.12174, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.57.12174.
Final published version
URL
Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
1998
Major/Subject
Mcode
Degree programme
Language
en
Pages
12174-12180
Series
Physical Review B, Volume 57, Issue 19
Abstract
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in ZnSe are reported. Complexes formed by a substitutional nitrogen bound to a zinc interstitial or a selenium vacancy are shown to be the most probable candidates for the compensating defect in p-type ZnSe. Our results also show that the clustering of defects in ZnSe is an energetically favored process. This may explain the short lifetimes of ZnSe-based devices.Description
Keywords
ZnSe: native defects, nitrogen impurities
Other note
Citation
Pöykkö, S. & Puska, M. J. & Nieminen, Risto M. 1998. Nitrogen-impurity–native-defect complexes in ZnSe. Physical Review B. Volume 57, Issue 19. 12174-12180. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.57.12174.