Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2021-09-01

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School common, CHEM
Department of Chemical and Metallurgical Engineering

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Language

en

Pages

5

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Applied Surface Science Advances, Volume 5

Abstract

Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

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Keywords

Monte Carlo methods, Characterization techniques development, atomic layer deposition, Lateral high aspect ratio structure, Saturation profile, X-ray microanalysis

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DOI

10.1016/j.apsadv.2021.100102

Citation

Haimi, E, Ylivaara, O, Yim, J & Puurunen, R 2021, 'Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure', Applied Surface Science Advances, vol. 5, 100102. https://doi.org/10.1016/j.apsadv.2021.100102

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https://urn.fi/URN:NBN:fi:aalto-202106027150

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[article-cris] Kemian tekniikan korkeakoulu / CHEM