Study of in-plane electrical transport anisotropy of a -axis oriented YBa2Cu3 O7-δ nanodevices
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Physical Review B, Volume 95, issue 18, pp. 1-7
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In the present work, we report the growth of fully untwinned high-quality a-axis-oriented YBa2Cu3O7-δ films on (100) SrLaGaO4 substrates by using PrBa2Cu3O7-δ as a buffer layer. We also fabricated nanowires at different angles γ with respect to the [0,1,0] direction of the substrate and studied the in-plane anisotropy of the critical current density, which we explained by considering the anisotropy in the coherence length ξ and London penetration depth λL. Finally, half-integer Shapiro-like steps measured in slightly underdoped c-axis oriented (γ=90°) nanowires point towards a different transport regime, which could shed light on intriguing issues of high-critical-temperature superconductors.Description
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Baghdadi, R, Arpaia, R, Stepantsov, E, Arzeo, M, Golubev, D, Montemurro, D, Andersson, E, Bauch, T & Lombardi, F 2017, 'Study of in-plane electrical transport anisotropy of a -axis oriented YBa2Cu3 O7-δ nanodevices', Physical Review B, vol. 95, no. 18, 184505, pp. 1-7. https://doi.org/10.1103/PhysRevB.95.184505