Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Thumbnail Image

Access rights

openAccess
publishedVersion

URL

Journal Title

Journal ISSN

Volume Title

A4 Artikkeli konferenssijulkaisussa
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)

Authors

Date

2009

Department

Department of Micro and Nanosciences

Major/Subject

Mcode

Degree programme

Language

en

Pages

2

Series

Physics of Semiconductors, pp. 53-54, AIP Conference Proceedings ; Volume 1199

Abstract

The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

Description

Keywords

Carrier density, Electron affinity, InN, IV, IVT, Pt contact, Richardson constant, Schottky contact, Temperature dependence

Other note

DOI

10.1063/1.3295546

Citation

Rangel-Kuoppa, V-T, Suihkonen, S, Sopanen, M & Lipsanen, H 2009, Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes. in MJ Caldas & N Studart (eds), Physics of Semiconductors. AIP Conference Proceedings, vol. 1199, American Institute of Physics, pp. 53-54, International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 27/07/2008. https://doi.org/10.1063/1.3295546

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-201710157107

Collections

[article-cris] Sähkötekniikan korkeakoulu / ELEC