Evidence of 4He Crystallization via Quantum Tunneling at mK Temperatures
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© 1996 American Physical Society (APS). This is the accepted version of the following article: Ruutu, J. P. & Hakonen, Pertti J. & Penttilä, J. S. & Babkin, A. V. & Saramäki, J. P. & Sonin, E. B. 1996. Evidence of 4He Crystallization via Quantum Tunneling at mK Temperatures. Physical Review Letters. Volume 77, Issue 12. 2514-2517. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.77.2514, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.77.2514.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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2514-2517
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Physical Review Letters, Volume 77, Issue 12
Abstract
We have investigated creation of 4He crystals from the superfluid phase at the temperature range 2 mK–1.0 K. Statistical nucleation-event distributions in overpressure were found to be broad, asymmetric, and temperature independent below 100 mK. Our statistical analysis agrees with a theoretical model suggesting that solid formation is driven by macroscopical quantum-mechanical fluctuations from a seed preexisting in a cavity on the wall.Description
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Ruutu, J. P. & Hakonen, Pertti J. & Penttilä, J. S. & Babkin, A. V. & Saramäki, J. P. & Sonin, E. B. 1996. Evidence of 4He Crystallization via Quantum Tunneling at mK Temperatures. Physical Review Letters. Volume 77, Issue 12. 2514-2517. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.77.2514.