Nitrogen-impurity-native-defect complexes in ZnSe
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Authors
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
7
Series
Physical Review B, Volume 57, issue 19, pp. 12174-12180
Abstract
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in ZnSe are reported. Complexes formed by a substitutional nitrogen bound to a zinc interstitial or a selenium vacancy are shown to be the most probable candidates for the compensating defect in p-type ZnSe. Our results also show that the clustering of defects in ZnSe is an energetically favored process. This may explain the short lifetimes of ZnSe-based devices.Description
Keywords
Other note
Citation
Pöykkö, S, Puska, M J & Nieminen, R M 1998, 'Nitrogen-impurity-native-defect complexes in ZnSe', Physical Review B, vol. 57, no. 19, pp. 12174-12180. https://doi.org/10.1103/PhysRevB.57.12174