Nitrogen-impurity-native-defect complexes in ZnSe

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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1998-05-15

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Department of Applied Physics

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en

Pages

7
12174-12180

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PHYSICAL REVIEW B, Volume 57, issue 19

Abstract

Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in ZnSe are reported. Complexes formed by a substitutional nitrogen bound to a zinc interstitial or a selenium vacancy are shown to be the most probable candidates for the compensating defect in p-type ZnSe. Our results also show that the clustering of defects in ZnSe is an energetically favored process. This may explain the short lifetimes of ZnSe-based devices.

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DOI

10.1103/PhysRevB.57.12174

Citation

Pöykkö , S , Puska , M J & Nieminen , R M 1998 , ' Nitrogen-impurity-native-defect complexes in ZnSe ' , Physical Review B , vol. 57 , no. 19 , pp. 12174-12180 . https://doi.org/10.1103/PhysRevB.57.12174

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https://urn.fi/URN:NBN:fi:aalto-201805222705

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[article-cris] Perustieteiden korkeakoulu / SCI