Robustness of electrical quality of ion implanted black silicon emitters: Comparison between different ion implantation service providers

Loading...
Thumbnail Image

Access rights

openAccess
publishedVersion

URL

Journal Title

Journal ISSN

Volume Title

A4 Artikkeli konferenssijulkaisussa

Date

Major/Subject

Mcode

Degree programme

Language

en

Pages

4

Series

Proceedings of the 41st European Photovoltaic Solar Energy Conference and Exhibition

Abstract

Ion implantation provides precise control over the resulting dopant atom density, enabling high-quality optical and electrical performance of nanostructured (black silicon, b-Si) emitters. In this work, we study how sensitive the performance of Al2O3-passivated b-Si emitters is to small variations in the implantation conditions and the equipment used to perform it. We carried out boron emitter implantations for identical nanostructured and planar wafers at four different implantation service providers and with both beam line and parallel beam tool configurations. We then benchmarked the results against the earlier optimised b-Si emitter process. The results show that there are some differences in obtained sheet resistance and emitter saturation current depending on the service provider and the used tool configuration. Finally, there are also some deviations in terms of possible bulk contamination among the different service providers.

Description

Other note

Citation

Morozova, O, Chen, K, Radfar, B, Kentsch, U, Antwis, L, Savin, H & Vähänissi, V 2024, Robustness of electrical quality of ion implanted black silicon emitters: Comparison between different ion implantation service providers. in Proceedings of the 41st European Photovoltaic Solar Energy Conference and Exhibition. EU PVSEC, European Photovoltaic Solar Energy Conference and Exhibition, Vienna, Austria, 23/09/2024. https://doi.org/10.4229/EUPVSEC2024/1CV.2.19