aalto1 untyped-item.component.html
Red luminescence from strain-induced GaInP quantum dots
Loading...
Access rights
© 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
Final published version
URL
Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Major/Subject
Mcode
Degree programme
Language
en
Pages
3393-3395
Series
Applied Physics Letters, Volume 69, Issue 22
Abstract
The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dotluminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dotluminescenceproperties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.
Description
Other note
Citation
Sopanen, M. & Taskinen, M. & Lipsanen, Harri & Ahopelto, J. 1996. Red luminescence from strain-induced GaInP quantum dots. Applied Physics Letters. Volume 69, Issue 22. P. 3393-3395. ISSN 0003-6951 (printed). DOI: 10.1063/1.117270.