Correlation between Zn vacancies and photoluminescence emission in ZnO films

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2006
Major/Subject
Mcode
Degree programme
Language
en
Pages
053516/1-6
Series
Journal of Applied Physics, Volume 99, Issue 5
Abstract
Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5nm (3.346eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy.
Description
Keywords
ZnO, photoluminescence, positron annihilation, Zn vacancies
Other note
Citation
Zubiaga, A. & Garcia, J. A. & Plazaola, F. & Tuomisto, Filip & Saarinen, K. & Zuniga Perez, J. & Munoz-Sanjose, V. 2006. Correlation between Zn vacancies and photoluminescence emission in ZnO films. Journal of Applied Physics. Volume 99, Issue 5. 053516/1-6. ISSN 0021-8979 (printed). DOI: 10.1063/1.2175476