Correlation between Zn vacancies and photoluminescence emission in ZnO films
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© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 99, Issue 5 and may be found at http://scitation.aip.org/content/aip/journal/jap/99/5/10.1063/1.2175476.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Zubiaga, A.
Garcia, J. A.
Plazaola, F.
Tuomisto, Filip
Saarinen, K.
Zuniga Perez, J.
Munoz-Sanjose, V.
Date
2006
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Mcode
Degree programme
Language
en
Pages
053516/1-6
Series
Journal of Applied Physics, Volume 99, Issue 5
Abstract
Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5nm (3.346eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy.Description
Keywords
ZnO, photoluminescence, positron annihilation, Zn vacancies
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Citation
Zubiaga, A. & Garcia, J. A. & Plazaola, F. & Tuomisto, Filip & Saarinen, K. & Zuniga Perez, J. & Munoz-Sanjose, V. 2006. Correlation between Zn vacancies and photoluminescence emission in ZnO films. Journal of Applied Physics. Volume 99, Issue 5. 053516/1-6. ISSN 0021-8979 (printed). DOI: 10.1063/1.2175476