Correlation between Zn vacancies and photoluminescence emission in ZnO films

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© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 99, Issue 5 and may be found at http://scitation.aip.org/content/aip/journal/jap/99/5/10.1063/1.2175476.

URL

Journal Title

Journal ISSN

Volume Title

School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Authors

Zubiaga, A.
Garcia, J. A.
Plazaola, F.
Tuomisto, Filip
Saarinen, K.
Zuniga Perez, J.
Munoz-Sanjose, V.

Date

2006

Major/Subject

Mcode

Degree programme

Language

en

Pages

053516/1-6

Series

Journal of Applied Physics, Volume 99, Issue 5

Abstract

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5nm (3.346eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy.

Description

Keywords

ZnO, photoluminescence, positron annihilation, Zn vacancies

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Citation

Zubiaga, A. & Garcia, J. A. & Plazaola, F. & Tuomisto, Filip & Saarinen, K. & Zuniga Perez, J. & Munoz-Sanjose, V. 2006. Correlation between Zn vacancies and photoluminescence emission in ZnO films. Journal of Applied Physics. Volume 99, Issue 5. 053516/1-6. ISSN 0021-8979 (printed). DOI: 10.1063/1.2175476