Precise control of the interlayer twist angle in large scale MoS2 homostructures

Loading...
Thumbnail Image
Access rights
openAccess
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2020-05-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
Series
Nature Communications, Volume 11, issue 1
Abstract
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.
Description
| openaire: EC/H2020/834742/EU//ATOP | openaire: EC/H2020/820423/EU//S2QUIP
Keywords
Other note
Citation
Liao, M, Wei, Z, Du, L, Wang, Q, Tang, J, Yu, H, Wu, F, Zhao, J, Xu, X, Han, B, Liu, K, Gao, P, Polcar, T, Sun, Z, Shi, D, Yang, R & Zhang, G 2020, ' Precise control of the interlayer twist angle in large scale MoS 2 homostructures ', Nature Communications, vol. 11, no. 1, 2153 . https://doi.org/10.1038/s41467-020-16056-4