Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon
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© 2007 American Physical Society (APS). This is the accepted version of the following article: Kuitunen, K. & Saarinen, K. & Tuomisto, Filip. 2007. Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon. Physical Review B. Volume 75, Issue 4. 045210/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.045210, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.75.045210.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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045210/1-5
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Physical Review B, Volume 75, Issue 4
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We have measured positron lifetime and Doppler broadening in highly As-doped silicon containing thermally generated V−As3 defect complexes (vacancy is surrounded by three arsenic atoms). We observe positron detrapping from the V−As3 defect complex and determine the binding energy of 0.27 eV of a positron to the complex. The results explain why 85% of the thermal vacancies formed in highly As-doped Si at temperatures over 700 K are invisible to positron measurements at elevated temperatures.Description
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Kuitunen, K. & Saarinen, K. & Tuomisto, Filip. 2007. Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon. Physical Review B. Volume 75, Issue 4. 045210/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.045210