Identification of the VAl-ON defect complex in AlN single crystals
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2011-08-29
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Language
en
Pages
4
1_5
1_5
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PHYSICAL REVIEW B, Volume 84, issue 8
Abstract
In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl-ON complexes in the concentration range 1018 cm-3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves V Al. © 2011 American Physical Society.Description
Keywords
absorption, AlN, positron, vacancy
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Citation
Mäki , J-M , Makkonen , I , Tuomisto , F , Karjalainen , A , Suihkonen , S , Räisänen , J , Chemekova , T Y & Makarov , Y N 2011 , ' Identification of the VAl-ON defect complex in AlN single crystals ' , Physical Review B , vol. 84 , no. 8 , 081204 , pp. 1_5 . https://doi.org/10.1103/PhysRevB.84.081204