Identification of the VAl-ON defect complex in AlN single crystals

In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl-ON complexes in the concentration range 1018 cm-3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves V Al. © 2011 American Physical Society.

Keywords

absorption, AlN, positron, vacancy

DOI

10.1103/PhysRevB.84.081204

Citation

Mäki , J-M , Makkonen , I , Tuomisto , F , Karjalainen , A , Suihkonen , S , Räisänen , J , Chemekova , T Y & Makarov , Y N 2011 , ' Identification of the VAl-ON defect complex in AlN single crystals ' , Physical Review B , vol. 84 , no. 8 , 081204 , pp. 1_5 . https://doi.org/10.1103/PhysRevB.84.081204

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-201805222255

Collections

[article-cris] Perustieteiden korkeakoulu / SCI

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