Identification of the VAl-ON defect complex in AlN single crystals
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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Physical Review B, Volume 84, issue 8, pp. 1_5
Abstract
In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl-ON complexes in the concentration range 1018 cm-3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves V Al. © 2011 American Physical Society.Description
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Mäki, J-M, Makkonen, I, Tuomisto, F, Karjalainen, A, Suihkonen, S, Räisänen, J, Chemekova, T Y & Makarov, Y N 2011, 'Identification of the VAl-ON defect complex in AlN single crystals', Physical Review B, vol. 84, no. 8, 081204, pp. 1_5. https://doi.org/10.1103/PhysRevB.84.081204