Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2018-11-01

Department

Department of Electronics and Nanoengineering

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Mcode

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Language

en

Pages

9

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Solar Energy Materials and Solar Cells, Volume 186, pp. 356-364

Abstract

In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p+ and n+ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm−2, respectively. Based on the results obtained with SiO2/Al2O3/SiNx emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiNx passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiNx emitter passivation scheme is a promising candidate for photovoltaic industry.

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Keywords

AlO, Boron emitter, PERT, Phosphorus emitter, SiO, Surface passivation

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DOI

10.1016/j.solmat.2018.07.007

Citation

Huang, H, Modanese, C, Sun, S, von Gastrow, G, Wang, J, Pasanen, T P, Li, S, Wang, L, Bao, Y, Zhu, Z, Sneck, S & Savin, H 2018, 'Effective passivation of p + and n + emitters using SiO 2 /Al 2 O 3 /SiN x stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells', Solar Energy Materials and Solar Cells, vol. 186, pp. 356-364. https://doi.org/10.1016/j.solmat.2018.07.007

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https://urn.fi/URN:NBN:fi:aalto-201808214650

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[article-cris] Sähkötekniikan korkeakoulu / ELEC