Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO
Loading...
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
2011-09
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
1-6
1-6
Series
PHYSICAL REVIEW B, Volume 84, issue 11
Abstract
Self-compensation, the tendency of a crystal to lower its energy by forming point defects to counter the effects of a dopant, is here quantitatively proven. Based on a new theoretical formalism and several different experimental techniques, we demonstrate that the addition of 1.4 × 1021-cm−3 Ga donors in ZnO causes the lattice to form 1.7 × 1020-cm−3 Zn-vacancy acceptors. The calculated VZn formation energy of 0.2 eV is consistent with predictions from density functional theory. Our formalism is of general validity and can be used to investigate self-compensation in any degenerate semiconductor material.Description
Keywords
conductivity, degenerate, positron, ZnO
Other note
Citation
Look , D C , Leedy , K D , Vines , L , Svensson , B G , Zubiaga , A , Tuomisto , F , Doutt , D & Brillson , L J 2011 , ' Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO ' , Physical Review B , vol. 84 , no. 11 , 115202 , pp. 1-6 . https://doi.org/10.1103/PhysRevB.84.115202