Defect-induced nucleation and growth of amorphous silicon
| dc.contributor | Aalto-yliopisto | fi |
| dc.contributor | Aalto University | en |
| dc.contributor.author | Lewis, Laurent J. | |
| dc.contributor.author | Nieminen, Risto M. | |
| dc.contributor.department | Teknillisen fysiikan laitos | fi |
| dc.contributor.department | Department of Applied Physics | en |
| dc.contributor.school | Perustieteiden korkeakoulu | fi |
| dc.contributor.school | School of Science | en |
| dc.date.accessioned | 2015-08-15T09:01:15Z | |
| dc.date.available | 2015-08-15T09:01:15Z | |
| dc.date.issued | 1996 | |
| dc.description.abstract | We propose a microscopic model of the amorphization of silicon such as that resulting from ion implantation. We demonstrate that amorphization can be induced by the presence of defects provided they form clusters embedded in a defective crystalline matrix. Our results are in striking agreement with transmission-electron microscopy measurements and confirm the superlinear dependence of damage on deposited energy, supporting the view that the crystal-to-amorphous transition proceeds via nucleation and growth. | en |
| dc.description.version | Peer reviewed | en |
| dc.format.extent | 1459-1462 | |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Lewis, Laurent J. & Nieminen, Risto M. 1996. Defect-induced nucleation and growth of amorphous silicon. Physical Review B. Volume 54, Issue 3. 1459-1462. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.1459. | en |
| dc.identifier.doi | 10.1103/physrevb.54.1459 | |
| dc.identifier.issn | 1550-235X (electronic) | |
| dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/17440 | |
| dc.identifier.urn | URN:NBN:fi:aalto-201508144051 | |
| dc.language.iso | en | en |
| dc.publisher | American Physical Society (APS) | en |
| dc.relation.ispartofseries | Physical Review B | en |
| dc.relation.ispartofseries | Volume 54, Issue 3 | |
| dc.rights | © 1996 American Physical Society (APS). This is the accepted version of the following article: Lewis, Laurent J. & Nieminen, Risto M. 1996. Defect-induced nucleation and growth of amorphous silicon. Physical Review B. Volume 54, Issue 3. 1459-1462. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.1459, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.54.1459. | en |
| dc.rights.holder | American Physical Society (APS) | |
| dc.subject.keyword | amorphous silicon | en |
| dc.subject.keyword | growth | en |
| dc.subject.keyword | nucleation | en |
| dc.subject.other | Physics | en |
| dc.title | Defect-induced nucleation and growth of amorphous silicon | en |
| dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
| dc.type.dcmitype | text | en |
| dc.type.version | Final published version | en |
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