Defect-induced nucleation and growth of amorphous silicon

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© 1996 American Physical Society (APS). This is the accepted version of the following article: Lewis, Laurent J. & Nieminen, Risto M. 1996. Defect-induced nucleation and growth of amorphous silicon. Physical Review B. Volume 54, Issue 3. 1459-1462. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.1459, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.54.1459.

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Journal Title

Journal ISSN

Volume Title

School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

1996

Major/Subject

Mcode

Degree programme

Language

en

Pages

1459-1462

Series

Physical Review B, Volume 54, Issue 3

Abstract

We propose a microscopic model of the amorphization of silicon such as that resulting from ion implantation. We demonstrate that amorphization can be induced by the presence of defects provided they form clusters embedded in a defective crystalline matrix. Our results are in striking agreement with transmission-electron microscopy measurements and confirm the superlinear dependence of damage on deposited energy, supporting the view that the crystal-to-amorphous transition proceeds via nucleation and growth.

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Keywords

amorphous silicon, growth, nucleation

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Citation

Lewis, Laurent J. & Nieminen, Risto M. 1996. Defect-induced nucleation and growth of amorphous silicon. Physical Review B. Volume 54, Issue 3. 1459-1462. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.1459.