Defect-induced nucleation and growth of amorphous silicon
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© 1996 American Physical Society (APS). This is the accepted version of the following article: Lewis, Laurent J. & Nieminen, Risto M. 1996. Defect-induced nucleation and growth of amorphous silicon. Physical Review B. Volume 54, Issue 3. 1459-1462. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.1459, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.54.1459.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Date
1996
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Mcode
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Language
en
Pages
1459-1462
Series
Physical Review B, Volume 54, Issue 3
Abstract
We propose a microscopic model of the amorphization of silicon such as that resulting from ion implantation. We demonstrate that amorphization can be induced by the presence of defects provided they form clusters embedded in a defective crystalline matrix. Our results are in striking agreement with transmission-electron microscopy measurements and confirm the superlinear dependence of damage on deposited energy, supporting the view that the crystal-to-amorphous transition proceeds via nucleation and growth.Description
Keywords
amorphous silicon, growth, nucleation
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Citation
Lewis, Laurent J. & Nieminen, Risto M. 1996. Defect-induced nucleation and growth of amorphous silicon. Physical Review B. Volume 54, Issue 3. 1459-1462. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.1459.