Compensating point defects in 4He+- irradiated InN

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2007
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
1-4
Series
PHYSICAL REVIEW B, Volume 75, issue 19
Abstract
We use positron annihilation spectroscopy to study 2MeV 4He+-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600cm−1. The In vacancies are introduced at a significantly lower rate of 100cm−1, making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the other hand, negative non-open volume defects are introduced at a rate higher than 2000cm−1. These defects are tentatively attributed to interstitial nitrogen and may ultimately limit the free-electron concentration at high irradiation fluences.
Description
Keywords
InN, irradiation, positron annihilation, vacancy
Other note
Citation
Tuomisto , F , Pelli , A , Yu , K M , Walukiewicz , W & Schaff , W J 2007 , ' Compensating point defects in 4 He + - irradiated InN ' , Physical Review B , vol. 75 , no. 19 , 193201 , pp. 1-4 . https://doi.org/10.1103/PhysRevB.75.193201