Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2015
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Mcode
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Language
en
Pages
5
1-5
1-5
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Applied Physics Letters, Volume 106, issue 13
Abstract
In this work, poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiF-DBT) was used as active layer in bilayer solar cell with C60 as electron acceptor. As cast devices already show reasonable power conversion efficiency (PCE) that increases to 4% upon annealing at 100 °C. Space charge limited measurements of the hole mobility (μ) in PSiF-DBT give μ ∼ 1.0 × 10−4 cm2/(V s) which does not depend on the temperature of the annealing treatment. Moreover, positron annihilation spectroscopy experiments revealed that PSiF-DBT films are well stacked even without the thermal treatment. The variations in the transport of holes upon annealing are then small. As a consequence, the PCE rise was mainly induced by the increase of the polymer surface roughness that leads to a more effective interface for exciton dissociation at the PSiF-DBT/fullerene heterojunction.Description
Keywords
blend, polymer, semiconcting
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Citation
Marchiori , C F N , Yamamoto , N A D , Matos , C F , Kujala , J , Macedo , A G , Tuomisto , F , Zarbin , A J G , Koehler , M & Roman , L S 2015 , ' Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C 60 ' , Applied Physics Letters , vol. 106 , no. 13 , 133301 , pp. 1-5 . https://doi.org/10.1063/1.4916515