A Sub-nW Temperature Invariant Voltage Reference in a Unipolar TFT-based Flexible IC Technology
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A4 Artikkeli konferenssijulkaisussa
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FLEPS 2024 - IEEE International Conference on Flexible and Printable Sensors and Systems, Proceedings, IEEE International Conference on Flexible and Printable Sensors and Systems
Abstract
Voltage reference circuits are crucial for any mixed-signal circuits, providing PVT (Process, Voltage, Temperature) robust output for the system's stability and accuracy. This paper presents a novel voltage reference circuit implemented in an indium gallium zinc oxide (IGZO) based thin film transistors (TFT) technology, proposing for the first time a sub-nanowatt, area-efficient circuit realized with only a single N-type TFT in a 600 nm technology. The design occupies a minimal area of 27x37 μm2, operates across a broad supply voltage range from 0.5 V to 3 V, and maintains functionality from 0 °C to 100 °C. The circuit has an ultra-low power consumption between 0.75 nW to 1.2 nW while achieving an output voltage of 454 mV with a temperature coefficient (TC) as low as 28.9 ppm/°C. The simulated results, which include process variation, temperature dependence, line sensitivity and power supply rejection ratio measurements, underline the circuit's potential for high-efficiency, low-power applications in next-generation flexible electronics.Description
Publisher Copyright: © 2024 IEEE.
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Monga, D C & Halonen, K 2024, A Sub-nW Temperature Invariant Voltage Reference in a Unipolar TFT-based Flexible IC Technology. in FLEPS 2024 - IEEE International Conference on Flexible and Printable Sensors and Systems, Proceedings. IEEE International Conference on Flexible and Printable Sensors and Systems, IEEE, IEEE International Conference on Flexible and Printable Sensors and Systems, Tampere, Finland, 30/06/2024. https://doi.org/10.1109/FLEPS61194.2024.10603932