A Sub-nW Temperature Invariant Voltage Reference in a Unipolar TFT-based Flexible IC Technology

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A4 Artikkeli konferenssijulkaisussa

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2024

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en

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Abstract

Voltage reference circuits are crucial for any mixed-signal circuits, providing PVT (Process, Voltage, Temperature) robust output for the system's stability and accuracy. This paper presents a novel voltage reference circuit implemented in an indium gallium zinc oxide (IGZO) based thin film transistors (TFT) technology, proposing for the first time a sub-nanowatt, area-efficient circuit realized with only a single N-type TFT in a 600 nm technology. The design occupies a minimal area of 27x37 μm2, operates across a broad supply voltage range from 0.5 V to 3 V, and maintains functionality from 0 °C to 100 °C. The circuit has an ultra-low power consumption between 0.75 nW to 1.2 nW while achieving an output voltage of 454 mV with a temperature coefficient (TC) as low as 28.9 ppm/°C. The simulated results, which include process variation, temperature dependence, line sensitivity and power supply rejection ratio measurements, underline the circuit's potential for high-efficiency, low-power applications in next-generation flexible electronics.

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Publisher Copyright: © 2024 IEEE.

Keywords

flexible integrated circuits, IGZO, TFT, thermal compensation, ultra-low power, Voltage reference

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Citation

Monga, D C & Halonen, K 2024, A Sub-nW Temperature Invariant Voltage Reference in a Unipolar TFT-based Flexible IC Technology . in FLEPS 2024 - IEEE International Conference on Flexible and Printable Sensors and Systems, Proceedings . IEEE International Conference on Flexible and Printable Sensors and Systems, IEEE, IEEE International Conference on Flexible and Printable Sensors and Systems, Tampere, Finland, 30/06/2024 . https://doi.org/10.1109/FLEPS61194.2024.10603932