Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN

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Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2020-10-01

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Mcode

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Language

en

Pages

5

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Journal of Crystal Growth, Volume 547

Abstract

We have applied positron annihilation spectroscopy to study the formation of Ga vacancy related defects in Mg and Mn doped bulk GaN crystals grown by the ammonothermal method. We show that Mn doping has little or no effect on the formation of Ga vacancies, while Mg doping strongly suppresses their formation, in spite of both dopants leading to highly resistive material. We suggest the differences are primarily due to the hydrogen-dopant interactions. Further investigations are called for to draw a detailed picture of the atomic scale phenomena in the synthesis of ammonothermal GaN.

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Keywords

A1. Doping, A1. Point defects, A2. Hydrothermal growth, B1. Nitrides, B2. Semiconducting III-V materials

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Citation

Heikkinen , T , Pavlov , J , Ceponis , T , Gaubas , E , Zając , M & Tuomisto , F 2020 , ' Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN ' , Journal of Crystal Growth , vol. 547 , 125803 . https://doi.org/10.1016/j.jcrysgro.2020.125803