Fivefold Peak Power Boost in HBT-driven GaAs Collapsing-Field-Domain-Based Sub-THz Source
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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2023-10-01
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Mcode
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Language
en
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IEEE Electron Device Letters, Volume PP, issue 99
Abstract
Miniature on-chip sources based on the collapsing field domain phenomenon in GaAs have advanced compact sub-picosecond time-domain imaging schemes operating in the 100-250 GHz frequency range. Efforts have been done to broaden the emission band of on-chip sources towards 400 GHz, but increasing the peak power of the emitted picosecond-range pulses remains physically challenging but practically important. In this work, a fivefold increase in peak power has been achieved by replacing the previously used hetero-bipolar-based collapsing field domain source operating in self-oscillating mode with a bipolar-based source externally pulsed by a hetero-bipolar driver. Importantly, the suggested solution unaffected the compactness of the source and facilitates its application in time domain imaging.Description
Keywords
Heterojunction bipolar transistors, Switches, Gallium arsenide, System-on-chip, Switching circuits, Plasmas, Mirrors
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Citation
Masyukov , M , Vainshtein , S , Grigorev , R & Taylor , Z 2023 , ' Fivefold Peak Power Boost in HBT-driven GaAs Collapsing-Field-Domain-Based Sub-THz Source ' , IEEE Electron Device Letters , vol. 44 , no. 10 , 10208246 , pp. 1716-1719 . https://doi.org/10.1109/LED.2023.3302015
