Fivefold Peak Power Boost in HBT-driven GaAs Collapsing-Field-Domain-Based Sub-THz Source
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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IEEE Electron Device Letters, Volume 44, issue 10, pp. 1716-1719
Abstract
Miniature on-chip sources based on the collapsing field domain phenomenon in GaAs have advanced compact sub-picosecond time-domain imaging schemes operating in the 100-250 GHz frequency range. Efforts have been done to broaden the emission band of on-chip sources towards 400 GHz, but increasing the peak power of the emitted picosecond-range pulses remains physically challenging but practically important. In this work, a fivefold increase in peak power has been achieved by replacing the previously used hetero-bipolar-based collapsing field domain source operating in self-oscillating mode with a bipolar-based source externally pulsed by a hetero-bipolar driver. Importantly, the suggested solution unaffected the compactness of the source and facilitates its application in time domain imaging.Description
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Masyukov, M, Vainshtein, S, Grigorev, R & Taylor, Z 2023, 'Fivefold Peak Power Boost in HBT-driven GaAs Collapsing-Field-Domain-Based Sub-THz Source', IEEE Electron Device Letters, vol. 44, no. 10, 10208246, pp. 1716-1719. https://doi.org/10.1109/LED.2023.3302015