Metastable defect complexes in GaAs
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© 1996 American Physical Society (APS). This is the accepted version of the following article: Pöykkö, S. & Puska, M. J. & Alatalo, M. & Nieminen, Risto M. 1996. Metastable defect complexes in GaAs. Physical Review B. Volume 54, Issue 11. 7909-7916. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.7909, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.54.7909.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1996
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Mcode
Degree programme
Language
en
Pages
7909-7916
Series
Physical Review B, Volume 54, Issue 11
Abstract
We have studied the As-vacancy–Si-impurity and the As-vacancy–As-antisite complexes in GaAs using state-of-the-art electronic structure methods. The complexes show metastability as a function of the position of the impurity or the antisite atom similarly to the large-lattice relaxation models for the isolated DX and EL2 centers. Our findings suggest the enlargement of the family of metastable defects in GaAs, and the results enlighten the metastability mechanisms in the large-lattice relaxation model. In order to discuss the possible experimental detection of this type of metastability, we calculate the positron states and annihilation characteristics for the defect complexes.Description
Keywords
semiconductors, electron structure
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Citation
Pöykkö, S. & Puska, M. J. & Alatalo, M. & Nieminen, Risto M. 1996. Metastable defect complexes in GaAs. Physical Review B. Volume 54, Issue 11. 7909-7916. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.7909.