Passively Mode-Locked Solid-State Laser with Absorption Tunable Graphene Saturable Absorber Mirror

dc.contributorAalto Universityen
dc.contributor.authorWang, Yiranen_US
dc.contributor.authorZhang, Baitaoen_US
dc.contributor.authorYang, Heen_US
dc.contributor.authorHou, Jiaen_US
dc.contributor.authorSu, Xiancuien_US
dc.contributor.authorSun, Zhipeien_US
dc.contributor.authorHe, Jingliangen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorCentre of Excellence in Quantum Technology, QTFen
dc.contributor.groupauthorZhipei Sun Groupen
dc.contributor.organizationShandong Universityen_US
dc.contributor.organizationHangzhou Dianzi Universityen_US
dc.contributor.organizationLiaocheng Universityen_US
dc.description| openaire: EC/H2020/820423/EU//S2QUIP
dc.description.abstractTwo-dimensional layered materials have attracted huge interest in the generation of ultrafast laser for their excellent saturable absorption properties. However, it is still challenging to precisely control their saturable absorption properties. Here, by alternatively changing the electric field intensity on the surface of high-reflection mirror, we successfully control the nonlinear absorption properties (e.g., saturable fluence, modulation depth) of graphene-based saturable absorber mirrors (GSAM) at the optical telecommunication wavelength of 1.3 mu m and their applications in solid-state lasers for the first time. Modulation depth of 1.2% is obtained from a GSAM with deposition of a lambda/8 ( = 1.3 mu m) thick SiO2 layer between the monolayer graphene and a high-reflection mirror, while modulation depth is increased to 4.3% with a lambda/4 thick SiO2 layer insertion in another GSAM. Pulses with the duration of 20 ps (lambda/8 thick SiO2 insertion) and 7.4 ps (lambda/4 thick SiO2 insertion) are achieved, respectively, based on the two mirrors. Our results indicate that this method is easy and reliable to versatility modulate the saturable absorption properties of other two-dimensional layered materials beyond graphene for the generation of ultrafast solid-state lasers.en
dc.description.versionPeer revieweden
dc.identifier.citationWang, Y, Zhang, B, Yang, H, Hou, J, Su, X, Sun, Z & He, J 2019, ' Passively Mode-Locked Solid-State Laser with Absorption Tunable Graphene Saturable Absorber Mirror ', Journal of Lightwave Technology, vol. 37, no. 13, 8674562, pp. 2927-2931 .
dc.identifier.otherPURE UUID: 480b2e11-dfa3-47cf-9c2c-e9bd6d03d811en_US
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dc.publisherInstitute of Electrical and Electronics Engineers
dc.relation.ispartofseriesJournal of Lightwave Technologyen
dc.relation.ispartofseriesVolume 37, issue 13en
dc.subject.keywordGraphene saturable absorberen_US
dc.subject.keywordmode-locked lasersen_US
dc.titlePassively Mode-Locked Solid-State Laser with Absorption Tunable Graphene Saturable Absorber Mirroren
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi