Near-surface defect profiling with slow positrons: Argon-sputtered Al(110)
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Physical Review B, Volume 32, issue 11, pp. 7561-7563
Abstract
We report on slow-positron measurements of atomic defect distribution near a solid surface. Defects are produced by argon-ion bombardment of an Al(110) surface in ultrahigh vacuum. Defect profiles have a typical width of 1525 A and contain a broader tail extending to 50100 A. The defect density at the outermost atomic layers saturates at high argon fluences to a few atomic percent, depending on sputtering conditions. Defect production rate at >1 keV Ar+ energies is typically 15 vacancy-interstitial pairs per incident ion. Molecular-dynamics simulations of the collision cascade predict similar defect distributions.Description
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Vehanen, A, Mäkinen, J, Hautojarvi, P, Huomo, H, Lahtinen, J, Nieminen, R M & Valkealahti, S 1985, 'Near-surface defect profiling with slow positrons : Argon-sputtered Al(110)', Physical Review B, vol. 32, no. 11, pp. 7561-7563. https://doi.org/10.1103/PhysRevB.32.7561