Near-surface defect profiling with slow positrons
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
1985-12-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
7561-7563
7561-7563
Series
Physical Review B, Volume 32, issue 11
Abstract
We report on slow-positron measurements of atomic defect distribution near a solid surface. Defects are produced by argon-ion bombardment of an Al(110) surface in ultrahigh vacuum. Defect profiles have a typical width of 1525 A and contain a broader tail extending to 50100 A. The defect density at the outermost atomic layers saturates at high argon fluences to a few atomic percent, depending on sputtering conditions. Defect production rate at >1 keV Ar+ energies is typically 15 vacancy-interstitial pairs per incident ion. Molecular-dynamics simulations of the collision cascade predict similar defect distributions.Description
Keywords
Other note
Citation
Vehanen , A , Mäkinen , J , Hautojarvi , P , Huomo , H , Lahtinen , J , Nieminen , R M & Valkealahti , S 1985 , ' Near-surface defect profiling with slow positrons : Argon-sputtered Al(110) ' , Physical Review B , vol. 32 , no. 11 , pp. 7561-7563 . https://doi.org/10.1103/PhysRevB.32.7561