Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2019-08-05
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en
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Applied Physics Letters, Volume 115, issue 6
Abstract
In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam epitaxy technique under a metal gate (metal/Gd2O3/AlGaN/GaN) causes six orders of magnitude reduction in gate leakage current compared to metal/AlGaN/GaN HEMT. We observe that epi-Gd2O3 undergoes complete structural changes from hexagonal to monoclinic as the thickness of the layer is increased from 2.8 nm to 15 nm. Such structural transformation is found to have a strong impact on electrical properties whereby the gate leakage current reaches its minimum value when the oxide thickness is 2.8 nm. We find a similar trend in the density of interface traps (Dit) having a minimum value of 2.98 × 1012 cm-2 eV-1 for the epioxide layer of thickness 2.8 nm. Our measurements also confirm a significant increase in the two dimensional electron gas (2DEG) density (∼40%) at AlGaN/GaN interface with epioxide grown on AlGaN, thus confirming the contribution of epitaxial lattice strain on 2DEG modulation.Description
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Sarkar, R, Bhunia, S, Nag, D, Barik, B C, Das Gupta, K, Saha, D, Ganguly, S, Laha, A, Lemettinen, J, Kauppinen, C, Kim, I, Suihkonen, S, Gribisch, P & Osten, H J 2019, ' Epi-Gd 2 O 3 /AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application ', Applied Physics Letters, vol. 115, no. 6, 063502 . https://doi.org/10.1063/1.5109861