Enhanced light extraction from InGaN/GaN quantum wells with silver gratings
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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Applied Physics Letters, Volume 102, issue 8, pp. 1-4
Abstract
We demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. The InGaN/GaN quantum well is inserted into a dielectric waveguide, naturally formed in the structure, and a silver grating is deposited on the surface and covered with a polymer film. The polymer layer greatly improves the extraction compared to a single metallic grating. The comparison of the experiments with simulations gives strong indications on the key role of weakly guided modes in the polymer layer diffracted by the grating.Description
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Homeyer, E, Mattila, P, Oksanen, J, Sadi, T, Nykänen, H, Suihkonen, S, Symonds, C, Tulkki, J, Tuomisto, F, Sopanen, M & Bellessa, J 2013, 'Enhanced light extraction from InGaN/GaN quantum wells with silver gratings', Applied Physics Letters, vol. 102, no. 8, 081110, pp. 1-4. https://doi.org/10.1063/1.4794066