Origin of nanoscale incipient plasticity in GaAs and InP crystal
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Crystals, Volume 9, issue 12
Abstract
In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn-and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.Description
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Chrobak, D, Trębala, M, Chrobak, A & Nowak, R 2019, 'Origin of nanoscale incipient plasticity in GaAs and InP crystal', Crystals, vol. 9, no. 12, 651. https://doi.org/10.3390/cryst9120651