Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2013

Department

Department of Micro and Nanosciences

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en

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Solar Energy Materials and Solar Cells, issue 114, pp. 54-58

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Keywords

gettering, lifetime, n-type mc-Si, red zone

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DOI

10.1016/j.solmat.2013.02.026

Citation

Vähänissi, V, Yli-Koski, M, Haarahiltunen, A, Talvitie, H, Bao, Y & Savin, H 2013, 'Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon', Solar Energy Materials and Solar Cells, no. 114, pp. 54-58. https://doi.org/10.1016/j.solmat.2013.02.026

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https://urn.fi/URN:NBN:fi:aalto-202510087572

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[article-cris] Sähkötekniikan korkeakoulu / ELEC