Selective growth of InGaAs on nanoscale InP islands
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© 1994 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1994
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Language
en
Pages
1662-1664
Series
Applied Physics Letters, Volume 65, Issue 13
Abstract
The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structuresfabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.Description
Keywords
III-V semiconductors, epitaxy, nanostructures, quantum wells, blue shift, atomic force microscopy, photoluminescence, scanning electron microscopy
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Citation
Ahopelto, J. & Lipsanen, Harri & Sopanen, M. & Koljonen, T. & Niemi, H. E.-M. 1994. Selective growth of InGaAs on nanoscale InP islands. Applied Physics Letters. Volume 65, Issue 13. P. 1662-1664. ISSN 0003-6951 (printed). DOI: 10.1063/1.112903.