Design and Analysis of SiGe Millimeter-Wave Radio Front-End MMICs For 5G Communication

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master_Ahamed_Raju_2017.pdf (5.98 MB)

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Sähkötekniikan korkeakoulu | Master's thesis
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Date

2017-08-28

Department

Major/Subject

Micro- and Nanoelectronic Circuit Design

Mcode

ELEC3036

Degree programme

NanoRad - Master’s Programme in Nano and Radio Sciences (TS2013)

Language

en

Pages

59+9

Series

Abstract

This thesis focuses on design and realization of millimeter-wave radio frontend circuits for fifth generation(5G) wireless communication in 0.13um silicongermanium(SiGe) BiCMOS process. Radio front-end includes single-pole doublethrough (SPDT) switch, low noise amplifier (LNA) and buffer amplifier(BA) as a part of radio frequency(RF) transceiver system for E-band. The SPDT switch utilizes the reveres saturated SiGe heterojunction bipolar transistor(HBT). The resulting reverse saturated switch shows an insertion loss of 1 dB , isolation of 26 dB, reflection coefficient better than 25 dB at 75 GHz and provides a bandwidth of 40 GHz. A single to differential ended low noise amplifier(LNA)is designed using transformer balun. Simultaneous noise and impedance matching is used in order to realize both low noise and low reflection at the same time. The post layout simulation of E-band low noise amplifier exhibits a gain and noise figure(NF) of 26 dB and 5.5 dB respectively with a power consumption of 33.5 mW. The buffer amplifier shows a gain of 5.5 dB at 75 GHz. Finally, the receiver achieved a gain of 19.6 dB, noise figure(NF) of 6.9 dB and impedance matching better than 13.5 dB at 75 GHz. A 3 dB bandwidth of more than 12 GHz is achieved from the receiver. Extensive simulation results showing the performance of each circuit of receiver are presented.

Description

Supervisor

Halonen, Kari

Thesis advisor

Parveg, Dristy
Varonen, Mikko

Keywords

MMIC, BiCMOS, reverse-saturation, SPDT, transformer balun, low noise amplifier

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https://urn.fi/URN:NBN:fi:aalto-201709046880

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