Protocol for temperature sensing using a three-level transmon circuit

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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Applied Physics Letters, Volume 119, issue 14

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We present a method for in situ temperature measurement of superconducting quantum circuits, by using the first three levels of a transmon device to which we apply a sequence of π gates. Our approach employs projective dispersive readout and utilizes the basic properties of the density matrix associated with thermal states. This method works with an averaging readout scheme and does not require a single-shot readout setup. We validate this protocol by performing thermometry in the range of 50-200 mK, corresponding to a range of residual populations 1%-20% for the first excited state and 0.02%-3% for the second excited state.

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Funding Information: The authors are grateful to Kirill Petrovnin and Shruti Dogra for assistance with the measurements and to Henrik Lievonen for help with data analysis. They acknowledge financial support from the RADDESS programme (Project No. 328193) of the Academy of Finland and from Grant No. FQXi-IAF19-06 (“Exploring the fundamental limits set by thermodynamics in the quantum regime”) of the Foundational Questions Institute Fund (FQXi), a donor advised fund of the Silicon Valley Community Foundation. This work is part of the Finnish Center of Excellence in Quantum Technology QTF (Project Nos. 312296 and 336810) of the Academy of Finland. One of the samples used in this work was produced using the material and technical resources of the Common Use Center of the Research and Education Center “Functional Micro/Nanosystems” of the Bauman Moscow State Technical University. This work used the experimental facilities of the Low Temperature Laboratory of OtaNano and is part of the European Microkelvin Platform project, EMP (Grant Agreement No. 824109). Publisher Copyright: © 2021 Author(s).

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Sultanov, A, Kuzmanović, M, Lebedev, A V & Paraoanu, G S 2021, 'Protocol for temperature sensing using a three-level transmon circuit', Applied Physics Letters, vol. 119, no. 14, 144002. https://doi.org/10.1063/5.0065224