aalto1 untyped-item.component.html
Vacancy defect and defect cluster energetics in ion-implanted ZnO
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
Series
Physical Review B, Volume 81, issue 8, pp. 1-4
Abstract
We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.
Description
Keywords
Other note
Citation
Dong, Y, Tuomisto, F, Svensson, B G, Kuznetsov, A Y & Brillson, L J 2010, 'Vacancy defect and defect cluster energetics in ion-implanted ZnO', Physical Review B, vol. 81, no. 8, 081201, pp. 1-4. https://doi.org/10.1103/PhysRevB.81.081201