Vacancy defect and defect cluster energetics in ion-implanted ZnO
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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1-4
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PHYSICAL REVIEW B, Volume 81, issue 8
Abstract
We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.Description
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Dong , Y , Tuomisto , F , Svensson , B G , Kuznetsov , A Y & Brillson , L J 2010 , ' Vacancy defect and defect cluster energetics in ion-implanted ZnO ' , Physical Review B , vol. 81 , no. 8 , 081201 , pp. 1-4 . https://doi.org/10.1103/PhysRevB.81.081201