Tailoring of Optoelectronic Properties of ϵ-Fe2O3 Thin Films Through Insertion of Organic Interlayers
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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5
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Physica Status Solidi: Rapid Research Letters, Volume 12, issue 12
Abstract
Combined atomic/molecular layer deposition (ALD/MLD) technique enables the engineering of inorganic–organic superlattices with atomic/molecular layer accuracy for the individual layer thicknesses. Here we demonstrate how the optical and electronic properties of ϵ-Fe2O3 thin films can be gradually tuned with an insertion of monomolecular organic layers. In our ϵ-Fe2O3:benzene superlattice (SL) structures the thickness of individual iron oxide layers varies in the range of 1–17 nm. With decreasing ϵ-Fe2O3 layer thickness, that is, SL period, the films become more transparent. Moreover revealed from the UV–vis spectra is that the indirect optical bandgap increases from ≈2.0 eV for ϵ-Fe2O3 up to ≈2.3 eV for the SL films with the shortest SL period. We foresee that the ALD/MLD approach presented here for the ϵ-Fe2O3–benzene thin films can be exploited in fabricating many other interesting hybrid material systems with controlled optoelectronic properties.Description
| openaire: EC/H2020/339478/EU//LAYERENG-HYBMAT
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Tanskanen, A & Karppinen, M 2018, 'Tailoring of Optoelectronic Properties of ϵ-Fe 2 O 3 Thin Films Through Insertion of Organic Interlayers', Physica Status Solidi: Rapid Research Letters, vol. 12, no. 12, 1800390. https://doi.org/10.1002/pssr.201800390