Defect distribution in a-plane GaN on Al2O3
Loading...
Access rights
© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 90, Issue 12 and may be found at http://scitation.aip.org/content/aip/journal/apl/90/12/10.1063/1.2715128.
URL
Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
2007
Major/Subject
Mcode
Degree programme
Language
en
Pages
121915/1-3
Series
Applied Physics Letters, Volume 90, Issue 12
Abstract
The authors studied the structural and point defect distributions of hydride vapor phase epitaxial GaN film grown in the [11−20] a direction on (1−102) r-plane sapphire with metal-organic vapor phase deposited a-GaN template using transmission electron microscopy, secondary ion mass spectrometry, and positron annihilation spectroscopy. Grown-in extended and point defects show constant behavior as a function of thickness, contrary to the strong nonuniform defect distribution observed in GaN grown along the [0001] direction. The observed differences are explained by orientation-dependent and kinetics related defect incorporation.Description
Keywords
positron annihilation, TEM, SIMS, non-polar
Other note
Citation
Tuomisto, Filip & Paskova, T. & Kröger, R. & Figge, S. & Hommel, D. & Monemar, B. & Kersting, R. 2007. Defect distribution in a-plane GaN on Al2O3. Applied Physics Letters. Volume 90, Issue 12. 121915/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2715128