He implantation induced defects in InN

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2014
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
1-4
Series
Journal of Physics: Conference Series, Volume 505, issue 1
Abstract
InN layers have been implanted with helium at 158 keV at various fluences to study the nature of the generated defects. The defects have been probed using positron annihilation spectroscopy. The first measurements showed that at least two different kinds of defects are created depending of the implantation fluence. The second measurements performed two years later gave different results suggesting that at least one of these defects is not stable at room temperature.
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Keywords
InN, irradiation, positron, vacancy
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Citation
Linez , F , Ritt , M , Rauch , C , Kilanski , L , Choi , S , Speck , J S , Räisänen , J & Tuomisto , F 2014 , ' He implantation induced defects in InN ' , Journal of Physics: Conference Series , vol. 505 , no. 1 , 012012 , pp. 1-4 . https://doi.org/10.1088/1742-6596/505/1/012012