Modeling phosphorus diffusion gettering of iron in single crystal silicon

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorHaarahiltunen, Antti
dc.contributor.authorSavin, Hele
dc.contributor.authorYli-Koski, Marko
dc.contributor.authorTalvitie, Heli
dc.contributor.authorSinkkonen, Juha
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-04-09T09:01:31Z
dc.date.available2015-04-09T09:01:31Z
dc.date.issued2009
dc.description.abstractWe propose a quantitative model for phosphorus diffusion gettering (PDG) of iron in silicon, which is based on a special fitting procedure to experimental data. We discuss the possibilities of the underlying physics of the segregation coefficient. Finally, we show that the proposed PDG model allows quantitative analysis of gettering efficiency of iron at various processing conditions.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHaarahiltunen, Antti & Savin, Hele & Yli-Koski, Marko & Talvitie, Heli & Sinkkonen, Juha. 2009. Modeling phosphorus diffusion gettering of iron in single crystal silicon. Journal of Applied Physics. Volume 105, Issue 2. 0021-8979 (printed). DOI: 10.1063/1.3068337en
dc.identifier.doi10.1063/1.3068337
dc.identifier.issn0021-8979 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/15602
dc.identifier.urnURN:NBN:fi:aalto-201504092256
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 105, Issue 2
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/japen
dc.rights.holderAmerican Institute of Physics
dc.subject.keywordphosphorus diffusion getteringen
dc.subject.keywordironen
dc.subject.keywordsiliconen
dc.subject.keywordgettering efficiencyen
dc.subject.keywordPDGen
dc.subject.keywordsolar cellsen
dc.subject.keywordsegregation coefficienten
dc.subject.otherEnergyen
dc.subject.otherPhysicsen
dc.subject.otherElectrical engineeringen
dc.titleModeling phosphorus diffusion gettering of iron in single crystal siliconen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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